Name: Jai KantUFID- 76691873Experiment Date: March 13, 2014Pre-Lab Report Week Six: PhotolithographyProblem 1: What is Thermionic Emission?? Answer: the term thermionic emission derives from the phenomenon of quantum mechanical tunneling which occurs in some particular circumstances. Sometimes it happens that electrons with energy lower than the height of the barrier cross the barrier by passing through it instead of beyond it, this is called the tunnel effect. In semiconductors we can see this in heavily doped material where current in the forward direction arises due to tunneling of charged particles with energies close to the Fermi level but not the actual barrier height. This type of emission due to tunneling is called field emission. Now, if we increase the forward bias voltage, the electrons gain enough energy to cross the thin depletion region. To avoid this type of tunneling and achieve pure current flow, we increase the temperature to a certain point such that the electrons receive enough energy to cross the barrier and never cross it again. This temperature-generated effect is called pure thermionic emission. The figure above is a representation of thermionic emission, where V – applied forward bias, EF is the Fermi level. Problem 2: What is the height of the Schottky barrier? Answer: It is the difference between the interfacial conduction band edge (Ec) and the Fermi level (Ef). From the following figure we have a better idea of ​​the height of the barrier which is given by ΦB(PhiB). Now the value of the Schottky barrier height depends on the contact resistances of the metal and semiconductor under consideration. The idea of ​​a Schottky contact is that when the metal and the semiconductor are brought into contact with each...... half the paper... instead of a blank? Answer: The advantages of using multiple blanks to measure transfer or contact resistance using the TLM (transmission line method) are as follows:1) A cylindrical TLM has been recently developed and simplifies the manufacturing process.2) Provides a more symmetrical current flow pattern.3) Using multiple gaps helps eliminate edge effects and achieve uniform distribution. Reference: 1) https://elearning2.courses.ufl.edu/access/content/group/UFL-EEE5354L-40146-12014/Week%209%20-%20Presentation%20-% 20Photolithographic%20Exposure%20Systems.pdf2) www.wikipedia.org3) https://elearning2.courses.ufl.edu/access/content/group/UFL-EEE5354L-40146-12014/Week%209%20-%20Presentation%20 -%20Photolithography%20Basics.pdf4) http://etidweb.tamu.edu/ftp/ENTC250/Lorenzo/Semiconductor%20Po5) http://www.ece.gatech.edu/research/labs/vc/theory/photolith. html